tic206 series silicon triacs
1 december 1971 - revised september 2002 specifications are subject to change without notice. mt1 mt2 g to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdc2aca 1 2 3 sensitive gate triacs 4 a rms glass passivated wafer 400 v to 700 v off-state voltage max i gt of 5 ma (quadrants 1 - 3) absolute maximum ratings over operating case temperature (unless otherwise noted) notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 85c derate linearly to 110c case temperatu re at the rate of 160 ma/c. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to origi nal thermal equilibrium. during the surge, gate control may be lost. 4. this value applies for a maxi mum averaging time of 20 ms. rating symbol value unit repetitive peak off-state voltage (see note 1) TIC206D tic206m tic206s v drm 400 600 700 v full-cycle rms on-state current at (or below) 85c case temperature (see note 2) i t(rms) 4 a peak on-state surge current full-sine-wave at (or below) 25c case temperature (see note 3) i tsm 25 a peak gate current i gm 0.2 a peak gate power dissipation at (or below) 85c case temperature (pulse width 200 s) p gm 1.3 w average gate power dissipat ion at (or below) 85c case temperat ure (see note 4) p g(av) 0.3 w operating case temperature range t c -40 to +110 c storage temperature range t stg -40 to +125 c lead temperature 1.6 mm from case for 10 seconds t l 230 c electrical characteristics at 25c case tem perature (un less otherwise noted ) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm i g = 0 t c = 110c 1 ma i gt gate trigger current v supply = +12 v? v supply = +12 v? v supply = -12 v? v supply = -12 v? r l = 10 ? r l = 10 ? r l = 10 ? r l = 10 ? t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 0.9 -2.2 -1.8 2.4 5 -5 -5 10 ma ? all voltages are with respect to main terminal 1.
tic206 series silicon triacs 2
december 1971 - revised september 2002 specifications are subject to change without notice. ? all voltages are with respect to main terminal 1. notes: 5. this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. the triacs are triggered by a 15-v (open circuit amplitude) pulse supplied by a gen erator with the following characteristics: r g = 100 ? , t p(g) = 20 s, t r = 15 ns, f = 1 khz. v gt gate trigger voltage v supply = +12 v? v supply = +12 v? v supply = -12 v? v supply = -12 v? r l = 10 ? r l = 10 ? r l = 10 ? r l = 10 ? t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 0.7 -0.7 -0.7 0.7 2 -2 -2 2 v v t on-state voltage i t = 4.2 a i g = 50 ma (see note 5) 1.4 2.2 v i h holding current v supply = +12 v? v supply = -12 v? i g = 0 i g = 0 init? i tm = 100 ma init? i tm = -100 ma 1.5 -1.3 15 -15 ma i l latching current v supply = +12 v? v supply = -12 v? (see note 6) 30 -30 ma dv/dt critical rate of rise of off-state voltage v drm = rated v drm i g = 0 t c = 110c 20 v/s dv/dt (c) critical rise of commutation voltage v drm = rated v drm i trm = 4.2 a t c = 85c 1 3 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 7.8 c/w r ja junction to free air thermal resist ance 62.5 c/w electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter test conditions min typ max unit
tic206 series silicon triacs 3
december 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. figure 4. gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 01 1 10 100 tc05aa temperature vs v supply i gtm + + + - - - - + v aa = 12 v r l = 10 ? t w(g) = 20 s gate trigger voltage t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 v gt - gate trigger voltage - v 01 1 10 tc05ab temperature vs v aa = 12 v r l = 10 ? t w(g) = 20 s v supply i gtm + + + - - - - + holding current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i h - holding current - ma 01 1 10 tc05ad case temperature vs v supply + - v aa = 12 v i g = 0 initiating i tm = 100 ma latching current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i l - latching current - ma 0 1 10 100 tc05ae case temperature vs v aa = 12 v v supply i gtm + + + - - - - +
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